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61.
The effects of surface preparation and illumination on electric parameters of Au/InSb/InP(100) Schottky diode were investigated, in the later diode InSb forms a fine restructuration layer allowing to block In atoms migration to surface. In order to study the electric characteristics under illumination, we make use of an He-Ne laser of 1 mW power and 632.8 nm wavelength. The current-voltage I(VG), the capacitance-voltage C(VG) measurements were plotted and analysed. The saturation current Is, the serial resistance Rs and the mean ideality factor n are, respectively, equal to 2.03 × 10−5 A, 85 Ω, 1.7 under dark and to 3.97 × 10−5 A, 67 Ω, 1.59 under illumination. The analysis of I(VG) and C(VG) characteristics allows us to determine the mean interfacial state density Nss and the transmission coefficient θn equal, respectively, to 4.33 × 1012 eV−1 cm−2, 4.08 × 10−3 under dark and 3.79 × 1012 eV−1 cm−2 and 5.65 × 10−3 under illumination. The deep discrete donor levels presence in the semiconductor bulk under dark and under illumination are responsible for the non-linearity of the C−2(VG) characteristic. 相似文献
62.
The orientation-selective growth of LaNiO3 films on Si(100) by pulsed laser deposition using a MgO buffer 总被引:4,自引:0,他引:4
X.Y. Chen K.H. Wong C.L. Mak J.M. Liu X.B. Yin M. Wang Z.G. Liu 《Applied Physics A: Materials Science & Processing》2002,75(4):545-549
Highly (100)-oriented, (110)-oriented and polycrystalline LaNiO3 (LNO) films were successfully prepared on Si(100) using an oriented MgO film as a buffer. It was somewhat surprising to find
that that the orientation relation between the LNO film and the corresponding MgO buffer was: LNO(100)\MgO(110), LNO(110)\MgO(111)
and LNO(polycrystalline)\MgO(100). The crystalline quality of the LNO films was shown to be sensitive to the preparation conditions
of the MgO buffer. The film surface was very smooth, without micrometer-sized droplets being observed. All LNO films were
of metallic conductivity, with a room-temperature resistivities of approximately 250, 280 and 420 μΩ cm for the (110)-oriented,
(100)-oriented and polycrystalline LNO, respectively.
Received: 2 April 2001 / Accepted: 23 October 2001 / Published online: 3 June 2002 相似文献
63.
Nonlinear Theory of Spectra of Thermally Stimulated Currents in Complex Crystals with Hydrogen Bonds
Tonkonogov M. P. Ismailov Zh. T. Timokhin V. M. Fazylov K. K. Kalitka V. A. Baimukhanov Z. K. 《Russian Physics Journal》2002,45(10):1008-1018
The nonlinear theory of thermally stimulated depolarization currents is developed. The theory explains the processes of hetero- and homocharge relaxation in complex crystals with hydrogen bonds and allows the relaxation oscillator parameters to be calculated using the quadratic approximation for the external electric field. 相似文献
64.
Z. V. Golubenko A. S. Kamzin L. P. Ol’khovik M. M. Khvorov Z. I. Sizova V. P. Shabatin 《Physics of the Solid State》2002,44(9):1698-1702
Magnetization and remagnetization processes in a close-packed nanodispersed barium hexaferrite powder sample in the magnetically stable state were analyzed. Reversibility effects were discussed in terms of interparticle interaction. Judging from the magnetization curve and the parameters characterizing remagnetization irreversibility, the sample under study is a model system of small Stoner-Wohlfarth particles. 相似文献
65.
By using two sections of erbium doped fiber and a fiber optical reflector, a novel, highly efficient L bandamplifier is demonstrated with significantly power-conversion-efficiency enhancement and the gain increasing of as much as 13 dB. 相似文献
66.
S. J. Cheng W. Sheng P. Hawrylak S. Raymond S. Studenikin A. Sachrajda Z. Wasilewski A. Babinski M. Potemski G. Ortner M. Bayer 《Physica E: Low-dimensional Systems and Nanostructures》2004,21(2-4):211
We present results of calculations and experiments on electron–hole complexes in InGaAs/GaAs self-assembled quantum dots in high magnetic field (B). Due to hidden symmetries, the chemical potential of an N-exciton system at special B fields becomes insensitive to the exciton number as well as the magnetic field. This results in plateau regions of high intensity in measured magneto-PL spectrum. Theoretical calculations using exact diagonalization techniques successfully explain the measured magneto-photoluminescence spectrum with B fields up to 28 T. 相似文献
67.
差分吸收光谱法测量大气痕量气体浓度误差分析及改善方法 总被引:8,自引:2,他引:6
差分吸收光谱技术(DOAS)中采用线性最小二乘拟合方法,用痕量气体标准差分吸收截面对测量得到的差分吸收光谱进行拟合,得出大气中痕量气体的浓度.计算结果的准确性不仅取决于光谱的测量精度,而且受标准差分吸收截面以及仪器函数和温度等诸多因素的影响.详细地分析了计算误差的产生原因,提出了用高浓度样品池得到标准吸收截面的方法,针对光谱固有结构,以及温度对标准吸收截面的影响,改进了浓度反演算法.大量的实验表明,综合运用上述方法,即便对低浓度的样气,相对测量误差也能降低到10%以下. 相似文献
68.
69.
采用溶解-反应量热法在具有恒温环境的溶解-反应热量计内,测定了[Gd(Gly)4(Im)(H2O)](ClO4)3和[Y(Gly)4(Im)(H2O)](ClO4)3两种稀土甘氨酸咪唑配合物的标准生成焓分别为(-3 461.46 ±0.22) kJ·mol-1 和(-3 926.6±0.90) kJ·mol-1. 相似文献
70.